
MYXPM6021*
Revision 1.1 - 10/21/14
*Advanced information. Subject to change without notice.
27
MYXPM6021*
Form #: CSI-D-685 Document 011
Table5:PowerDomains(continued)
Power Supply
Module
MYXPM6021
Supplied Pins
Supplied
Voltage
Supplied
Current
Notes
LDO_VDDQ_VTT VDDQ_VTT ½ VDDQ
±2% accuracy
(DC)
325mA Push-pull LDO for DDR3 address line
termination.
LDO_V1P2A V1P2A 1.2V
±2% accuracy
(DC)
30mA LDO supplied by BUCK_V1P8A, low
quiescent current
LDO_VREFDQ0 VREFDQ0 ±3% accuracy
(DC & ripple)
10mA LDO supplied by BUCK_V1P8A
LDO_VREFDQ1 VREFDQ1 ±3% accuracy
(DC & ripple)
10mA LDO supplied by BUCK_V1P8A
LDO_VLP VLP 2.5V
±1.5% accuracy
(DC)
10mA LDO supplying the internal
MYXPM6021 electronic
SD/LDO_V1P2S V1P2S VDDQ/V1P8 34mA Function between switching device
(SD) and LDO can be selected via
device order code. SD can be used
with DDR3 LP memory for all other
types of memories the LDO solution
is proposed
SD_V1P2SX V1P2SX VDDQ/V1P8 155mA Switching device to generate
V1P2SX. In case of DDR3 L memory
this voltage will be 1.35V
SD_VUSBPHY VUSBPHY VSYS/V3P3_A 40mA Switching device supplying the
USBPHY with 3.3V. If V3P3A is
switched off VUSBPHY is supplied by
VSYS
SD_VSDIO VSDIO V1P8A/V3P3A 400mA/20
0mA
Switching device supplying the SDIO
interface. Output voltage is controlled
by digital input signals from SoC
SD_V1P8S V1P8S V1P8A 144mA MYXPM6021 internal switching
device supplied by V1P8A
SD_V1P8SX V1P8SX V1P8A 240mA MYXPM6021 internal switching
device supplied by V1P8A
SD_V2P85SX V2P85SX V2P85S 250mA MYXPM6021 internal switching
device supplied by V2P85S
SD_VHDMI VHDMI V5P0S 55mA MYXPM6021 internal switching
device supplied by V5P0S
SD_VSYS_S VSYS_S VSYS 10mA MYXPM6021 internal switching
device supplied by VSYS
EFS_VSYSU VSYSU VSYS 2750mA External p-channel FET switched
power domain supplied by VSYS
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