
MYXPM6021*
Revision 1.1 - 10/21/14
*Advanced information. Subject to change without notice.
41
MYXPM6021*
Form #: CSI-D-685 Document 011
V1P0SXexternalN-channelpowerswitchparameters:
Rdson (Vgs=4V) 10-22mohm
Input capacitance, Ciss 750-2640pF
Output capacitance, Coss 150-530pF
Reverse transfer capacitance, Crss 85-465pF
VDDQ_VTT:
TheVDDQ_VTTpowerrailisapush-pullLDOcapabletosourceandsinkmaximum325mA.VDDQ_VTTis½ofVDDQ
anditspassdeviceissourcedbyV1P0_Ainordertoreducetheoverallpowerdissipationinthesystem.
Table 15: Electrical Parameter for VDDQ_VTT
Symbol Parameter Min Typ Max Unit Notes / Condition
Input Requirement
Vin
(DDR3 LP)
Main input voltage
VDDQ_VTT_VIN
1.01 V Supplied by V1P0A
Vin
(DDR3 L)
Main input voltage
VDDQ_VTT_VIN
1.35 V Supplied by VDDQ
Cin VDDQ_VTT_IN 100 nF
Output Requirement
Vnom Nominal output voltage VDDQ/2 V VDDQ used to generate
VDDQ_VTT_VREF
Vtol Output voltage
tolerance
-2 +2 % Of input supply voltage
Cout Output capacity 10 μF
Iout-DC Output load current ±325 mA
Transient load current 0-240mA 200 200 ns
IQSC Quiescent current
VDDQ_VTT_VIN
200 μA Iout-DC = 0mA
PSRR Power supply rejection ratio 40 60 dB Noise = 1 Vpp, 1-10kHz,
½ Iout-DC
Vnoise Output Noise 60 100 μVRMS BW = 10-100kHz, ½
Iout
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